optocoupler, high speed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83681 702 rev. 1.7, 10-dec-08 sfh636 vishay semiconductors description the sfh636 is an optocoupler with a gaalas infrared emitting diode, optically coupled to an integrated photo detector consisting of a photo diode and a high speed transistor in a dip-6 plastic package. the device is functionally similar to 6n136 except there is no base connection, and the electrical foot print is different. noise and dv/dt performance is enhanced by not bringing out the base connection. signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 mhz. the potential difference between the circuits to be coupled should not exceed the maximum permissible reference. features ? high speed optocoupler without base connection ? isolation test voltage: 5300 v rms ? gaalas emitter ? integrated detector with photo diode and transistor ? high data transmission rate: 1.0 mbit/s ? ttl compatible ? open collector output ?ctr at i f = 16 ma, v o = 0.4 v, v cc = 4.5 v, t amb = 25 c: 19 % ? good ctr linearity relative to forward current ? low coupling capacitance ? dv/dt: typ. 10 kv/s ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ?igbt drivers ? data communications ? programmable controllers agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-5 (vde 0884) available with option 1 note for additional information on the availabl e options refer to option information. i179064 v cc c e a c nc 1 2 3 6 5 4 order information part remarks sfh636 ctr 19 %, dip-6 sfh636-x006 ctr 19 %, dip-6 400 mil (option 6) SFH636-X007 ctr 19 %, smd-6 (option 7) sfh636-x009 ctr 19 %, smd-6 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 3.0 v dc forward current i f 25 ma surge forward current t p 1.0 s, 300 pulses/s i fsm 1.0 a power dissipation p diss 45 mw
document number: 83681 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 703 sfh636 optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output vishay semiconductors notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional oper ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to reflow profile for soldering conditions for surface mo unted devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. output supply voltage v s - 0.5 to 30 v output voltage v o - 0.5 to 20 v output current i o 8ma power dissipation p diss 100 mw coupler isolation test voltage between emitter and detector v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to +100 c junction temperature t j 100 c soldering temperature (2) max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 16 ma v f 1.5 1.8 v reverse current v r = 3 v i r 0.5 10 a capacitance v r = 0 v, f = 1 mhz c o 125 pf thermal resistance r thja 700 k/w output logic high supply current i f = 0 v, v o (open), v cc = 15 v i cch 0.01 1 a i f = 0 v, v o (open), v cc = 15 v i cch 0.01 2 a output current, output high i f = 0 v, v o (open), v cc = 5.5 v i oh 0.003 0.5 a i f = 0 v, v o (open), v cc =15 v i oh 0.01 1 a i oh 50 a collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 3pf thermal resistance r thja 300 k/w coupler coupling capacitance c c 0.6 pf collector emitter saturation voltage i f = 16 ma, i o = 2.4 ma, v cc = 4.5 v v ol 0.1 0.4 v supply current, logic low i f = 16 ma, v o open, v cc = 15 v i dd 80 absolute maximum ratings (1) parameter test condition symbol value unit
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83681 704 rev. 1.7, 10-dec-08 sfh636 vishay semiconductors optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output fig. 1 - test setup fig. 2 - switching time measurement fig. 3 - common mode transient test fig. 4 - measurement waveform of cmr v cc 1 2 3 4 5 6 r l v o 100 c l = 15 pf c = 100 nf i f p u lse generator zo = 50 t r ,t f = 5 ns d u ty cycle = 10 % period = 100 s isfh636_01 isfh636_02 5 v 0 0 t t t phl t plh v o u t i f 1.5 v 16 ma current transfer ratio parameter test condition symbol min. typ. max. unit current transfer ratio i f = 16 ma, v o = 0.4 v, v cc = 4.5 v i c /i f 19 30 % i f = 16 ma, v o = 0.5 v, v cc = 4.5 v i c /i f 15 % switching characteristics parameter test condition symbol min. typ. max. unit propagation delay time (high to low) i f = 16 ma, v cc = 5.0 v, r l = 1.9 k t phl 0.3 0.8 s propagation delay time (low to low) i f = 16 ma, v cc = 5.0 v, r l = 1.9 k t plh 0.3 0.8 s isfh636_03 v cc 1 2 3 4 5 6 r l v o i f p u ls e generator common mode v cc a b c = 100 nf isfh636_04 5 v 0 0 t t v cm v o 0 v o t 10 % 90 % 90 % 10 % v ol t f t r a: i f =0ma a: i f =16ma common mode transient immunity parameter test condition symbol min. typ. max. unit common mode transient immunity (high) i o = 0 ma, v cm = 1500 v p-p , r l = 1.9 k , v cc = 5.0 v cm h 10 kv/s common mode transient immunity (low) i o = 16 ma, v cm = 1500 v p-p , r l = 1.9 k , v cc = 5.0 v cm l 10 kv/s
document number: 83681 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 705 sfh636 optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 5 - output characteristics- output current vs. output voltage fig. 6 - permissible forwar d current of emitting diode vs. ambient temperature fig. 7 - permissible to tal power dissipation vs. ambient temperature fig. 8 - forward current of emitting diode vs. forward voltage fig. 9 - small signal transfe r ratio vs. forward current fig. 10 - current transfer ratio (normalized) vs. ambient temperature 14 16 ma 12 10 024681012v 16 isfh636_05 v 0 8 6 4 2 0 v cc = 5.0 v i 0 40 ma 30 ma 25 ma 20 ma 15 ma 35 ma 10 ma 5 ma 35 40 ma 30 25 020 10 30 40 50 60 70 80 oc 100 isfh636_06 t a 20 15 10 5 0 i f 100 120 mw 80 0 102030405060708090100 isfh636_07 p tot t a 60 40 20 0 detector emitter 10 2 10 1 10 0 10 -1 0 1.2 1.3 1.4 1.5 1.6 isfh636_08 i f /ma vf/v 10 -2 10 -3 0.50 % 0.45 0.40 0.35 - 60 - 40 - 20 0 20 40 60 oc 100 isfh636_09 t a 0.30 0.25 0.20 0.15 0.10 0.05 0 v cc = 5.0 v i o i f 1.3 1.2 1.1 - 60 - 40 - 20 0 20 40 60 oc 100 isfh636_10 t a 1.0 0.9 0.8 0.7 0.6 i f = 16 ma, v o = 0.4 v, v cc = 5.0 v nctr 6n 135 6n 136
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83681 706 rev. 1.7, 10-dec-08 sfh636 vishay semiconductors optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output fig. 11 - output current (hi gh) vs. ambient temperature fig. 12 - delay times vs. ambient temperature fig. 13 - current transfer ratio (normalized) vs. forward current package dimensions in inches (millimeters) 10 -6 10 -7 10 -8 10 -9 - 60 - 40 - 20 0 20 40 60 oc 100 isfh636_11 i oh t a 10 -10 10 -11 10 -12 v 0 = v cc = 5.0 v, i f = 0 1400 ns 1200 1000 - 60 - 40 - 20 0 20 40 60 oc 100 isfh636_12 t a 800 600 400 200 0 i f = 16 ma, v cc = 5.0 v, r l = 4.1 k, sfh636: r l = 1.9 k t p t plh t phl t plh t phl 6n 135 6n 136 1.2 % 1.1 0.8 0.6 0.4 0.2 0 10 -4 10 -2 10 -1 a 10 3 nctr i f isfh636_13 i f = 16 ma, v o = 0.4 v, v cc = 5.0 v 6n 135 6n 136 i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45)
document number: 83681 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.7, 10-dec-08 707 sfh636 optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output vishay semiconductors min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83681 708 rev. 1.7, 10-dec-08 sfh636 vishay semiconductors optocoupler, high s peed phototransistor output, 1 mbd, 10 kv/ms cmr, split collector transistor output ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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